New 'RIE-ICP' for Dry Etching
Official Hand-over at the Users’ Meeting on 19th of July 2011.
The users of the Nanostructure Service Laboratory (NSL) at the DFG Centre for Functional Nanostructures (CFN) will in future have an additional piece of equipment available for dry etching: namely a reactive ion etching facility with inductively coupled plasma source (ICP) with a maximum output power of 1200W.
The new equipment enables the researchers on the campus of the Karlsruhe Institute for Technology (KIT) to additionally run etching processes based on chlorine chemistry on wafers with diameters of up to 4". As a result, nanostructures in particular from compound semiconductor systems and perovskite materials can be fabricated. The system extends the range of dry etching processes so far based on fluorine chemistry on the existing RIE. The Plasmalab System 100 (ICP180) from Oxford Instruments was delivered at the beginning of 2011 from Yatton in the UK and has been installed at the NSL during the past few months.
Lecture
Professor Gernot Goll, head of the NSL, will officially introduce the "RIE-ICP" at the first ever NSL users’ meeting and hand-over it to its use. In his talk entitled "Dry Etching by RIE and ICP Processes" Goll will explain the advantages of dry etching by means of ICP and possible application fields of the new system.
Members of the CFN as well as interested parties from KIT are welcome to attend this seminar at 5.00 pm. In addition to this talk, there will also be two user reports, one on the fabrication of nanostructured superconductor-ferromagnet point contacts and the other on substrate pattering for site-selective quantum dot growth.
The user meeting will be held on 19 July 2011 at the Otto Lehmann lecture hall on the South campus of KIT. The complete scientific programme of the NSL user meeting can be found here.